汽车前沿技术 | 罗姆推出650V IGBT 实现业界领先的低损耗特性

据报道，罗姆半导体（ROHM Semiconductor）宣布，已开发出第四代650V IGBT，适用于汽车电动压缩机、高压加热器以及工业设备逆变器等应用。作为车规级650V产品，新款IGBT在VCE(sat)=1.55V时实现了同类领先的低导通损耗，同时具备高短路容差，并符合AEC-Q101汽车可靠性标准。随着电动汽车向更高电压发展，碳化硅（SiC）在牵引逆变器等高功率应用中的应用日益广泛。与此同时，650V IGBT也被广泛用作低功率辅助系统的开关器件，例如汽车电动压缩机和高压加热器。硅基IGBT也广泛应用于工业设备，特别是电机和压缩机，预计市场需求将持续增长。这些应用需要更高的节能效果和更小的设备设计，因此对具有更高可靠性、更小尺寸和更高效率的功率器件有着强劲的需求。特别是，逆变器和加热器电路需要足够的短路容限，以承受短路期间检测和中断过电流所需的时间。为了满足这些市场需求，罗姆重新设计了器件结构，包括工艺和边缘端接结构，开发出第四代IGBT，该器件兼具低损耗特性和高短路容限，同时满足更高的电压要求。通过改进器件结构，产品提高了电流密度，同时降低了导通损耗和开关损耗。此外，尽管在降低损耗和提高短路容限之间存在权衡，但该产品在Tj = 25°C时仍能保证7 μs的超长短路耐受时间。这有助于提高应用效率和可靠性。该产品线包括12款采用TO-247N封装的产品，即RGAxxTS65HR/RGAxxTS65EHR系列，以及10款裸晶圆产品，即SG83xxWN系列。罗姆还在开发12款采用TO-247-4L封装的产品，即RGAxxTR65HR/RGAxxTR65EHR系列。电路设计所需的设计模型和资料也可从ROHM官方网站下载。TO-247N封装产品和部分裸晶圆产品现已上市。用户可通过DigiKey和Farnell等在线分销商购买TO-247N封装产品。展望未来，罗姆计划在现有封装基础上进一步扩展产品线，并开发采用TO-263L封装和顶部冷却（TSC）封装的紧凑型表面贴装IGBT产品。罗姆将继续拓展其高性能IGBT产品线，助力汽车和工业设备应用实现更高效率的驱动和小型化。ROHM has developed 4th Generation 650V IGBTs ideal for automotive electric compressors and HV heaters, as well as inverters for industrial equipment. As automotive-grade 650V-class products, new IGBTs achieve class-leading* low conduction loss with VCE(sat)= 1.55V, while providing high short-circuit tolerance and complying with the AEC-Q101 automotive reliability standard.As electric vehicles shift to higher voltages, SiC is increasingly adopted in high-power applications such as traction inverters. At the same time, 650V IGBTs are widely used as switching devices in auxiliary systems with lower power capacity, including automotive electric compressors and HV heaters. Silicon IGBTs are also widely used in industrial equipment, particularly motors and compressors, and demand is expected to continue expanding.These applications require greater energy savings and smaller equipment designs, creating strong demand for power devices that offer higher reliability, smaller size, and higher efficiency. In particular, inverter and heater circuits require short-circuit tolerance sufficient to endure the time needed to detect and interrupt overcurrent during a short circuit.In response to these market requirements, ROHM redesigned the device structure, including the process and edge termination structure, to develop 4th Generation IGBTs that combine low-loss characteristics with high short-circuit tolerance while addressing higher-voltage requirements. By revising the device structure, the products increase current density while reducing conduction and switching losses. In addition, despite the trade-off between lower loss and short-circuit tolerance, the products ensure a long short-circuit withstand time of 7 μs at Tj = 25°C. This contributes to higher efficiency and improved reliability in applications.The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR / RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website.The TO-247N package products and selected bare wafer products have been available (sample price: $8.50/unit, excluding tax). Online sales are available for TO-247N package products through online distributors such as DigiKey and Farnell.Going forward, ROHM plans to further expand the lineup in the same packages and develop compact, surface-mount IGBT products that adopt the TO-263L package and top-side cooling (TSC) packages. ROHM will continue to expand its lineup of high-performance IGBT products, contributing to higher-efficiency drive and miniaturization in automotive and industrial equipment applications.作者：rohm
来源：https://www.rohm.com

汽车前沿技术 | 罗姆推出650V IGBT 实现业界领先的低损耗特性

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